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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ540 DESCRIPTION *High Gain *High Output Voltage *Low Noise APPLICATIONS *Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 120 mA PC Collector Power Dissipation @TC=25 1.2 W TJ Junction Temperature 175 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BFQ540 TYP. MAX UNIT V(BR)CES Collector-Emitter Breakdown Voltage IC= 40A ; RBE= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10A ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100A ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.2 A hFE DC Current Gain IC= 40mA ; VCE= 8V 60 250 fT Current-Gain--Bandwidth Product IC= 40mA ; VCE= 8V; f= 1GHz 9 GHz Cre S21e2 Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.9 pF Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 12 13 dB NF Noise Figure IC= 40mA ; VCE= 8V; f= 900MHz 1.9 2.4 dB isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ540 isc Websitewww.iscsemi.cn |
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